 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZMY3V9 to ZMY110 Vishay Semiconductors Zener Diodes Features * Silicon Planar Power Zener Diodes. * For use in stablilizing and clipping circuits with high power rating. * The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request. * These diodes are also available in the DO-41 case with the type designation ZPY1 ... ZPY100. 18315 Mechanical Data Case: MELF Glass case Weight: approx. 135 mg Packaging Codes/Options: GS18/ 5 k per 13 " reel (12 mm tape), 10 k/box GS08/ 1.5 k per 7 " reel (12 mm tape), 12 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Zener current (see Table "Characteristics") Power dissipation 1) Test condition Symbol Value Unit Ptot 1.0 1) W Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient (max.) Thermal resistance junction to case (typ.) Junction temperature Storage temperature 1) Test condition Symbol RthJA RthJC Tj TS Value 170 60 175 - 55 to + 175 1) Unit C/W C/W C C Valid provided that electrodes are kept at ambient temperature. Document Number 85788 Rev. 1.5, 12-Jan-05 www.vishay.com 1 ZMY3V9 to ZMY110 Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage (2) Dynamic Resistance Temperature Coefficient of Zener Voltage VZ @ IZT 10-4/C typ 7 7 7 5 2 2 2 2 2 4 4 7 7 9 9 10 11 12 13 14 15 20 20 60 60 80 80 100 100 130 130 160 160 250 250 250 4 4 4 2 1 1 1 1 1 2 2 3 3 4 4 5 5 6 7 8 9 10 11 25 30 35 40 45 50 60 65 70 80 120 130 150 min -7 -7 -7 -6 -3 -1 0 0 3 3 5 5 5 5 5 7 7 7 7 7 7 7 7 7 8 8 8 8 8 8 8 8 8 9 9 9 max 2 3 4 5 5 6 7 7 8 8 9 10 10 10 10 11 11 11 11 12 12 12 12 12 12 13 13 13 13 13 13 13 13 13 13 13 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 0.7 1.5 2 3 5 6 7 7.5 8.5 9 10 11 12 14 15 17 18 20 22.5 25 27 29 32 35 38 42 47 51 56 61 68 75 82 203 182 165 150 135 128 110 100 89 82 74 66 60 55 49 44 40 36 34 29 27 25 22 20 18 17 15 14 13 11 10 9 8 7.5 7 6.4 Test Current IZT mA Reverse Voltage VR @ IR = 0.5 A V Admissible Zener Current (1) IZ @ Tamb=25C mA VZ @ IZT V min ZMY3V9 ZMY4V3 ZMY4V7 ZMY5V1 ZMY5V6 ZMY6V2 ZMY6V8 ZMY7V5 ZMY8V2 ZMY9V1 ZMY10 ZMY11 ZMY12 ZMY13 ZMY15 ZMY16 ZMY18 ZMY20 ZMY22 ZMY24 ZMY27 ZMY30 ZMY33 ZMY36 ZMY39 ZMY43 ZMY47 ZMY51 ZMY56 ZMY62 ZMY68 ZMY75 ZMY82 ZMY91 ZMY100 ZMY110 1) 2) rzj @ IZT, f = 1 kHz max 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.8 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 88 96 106 116 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 Valid provided that electrodes are kept at ambient temperature Tested with pulses tp = 5 ms The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dissipation see types ZMU100 ... ZMU180 www.vishay.com 2 Document Number 85788 Rev. 1.5, 12-Jan-05 ZMY3V9 to ZMY110 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 18312 18289 Figure 1. Dynamic Resistance vs. Zener Current Figure 4. Admissible Power Dissipation vs. Ambient Temperature 18313 18286 Figure 2. Dynamic Resistance vs. Zener Current Figure 5. Pulse Thermal Resistance vs. Pulse Duration ZMY100 ZMY82 ZMY68 ZMY56 ZMY43 18314 Figure 3. Dynamic Resistance vs. Zener Current Document Number 85788 Rev. 1.5, 12-Jan-05 www.vishay.com 3 ZMY3V9 to ZMY110 Vishay Semiconductors 18309 Figure 6. Breakdown Characteristics 18310 Figure 7. Breakdown Characteristics www.vishay.com 4 Document Number 85788 Rev. 1.5, 12-Jan-05 ZMY3V9 to ZMY110 Vishay Semiconductors 18311 Figure 8. Breakdown Characteristics Package Dimensions in mm (Inches) 4.00 (0.157) MAX ISO Method E Cathode Mark 2.6 (0.102) 2.4 (0.094) 1.25 (0.049) MIN 3.00 (0.118) MIN 0.55 (0.022) 5.2 (0.205) 4.8 (0.189) 6.50 (0.256) REF 18317 Document Number 85788 Rev. 1.5, 12-Jan-05 www.vishay.com 5 ZMY3V9 to ZMY110 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85788 Rev. 1.5, 12-Jan-05 |
Price & Availability of ZMY6V8
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |